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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUV26 DESCRIPTION *With TO-220C package *Low collector saturation voltage *Fast switching speed APPLICATIONS *For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (peak) Base current Base current (peak) Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 180 90 7 14 25 4 6 85 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance junction to mounting base MAX 1.92 UNIT K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. BUV26 SYMBOL MAX UNIT VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICEX IEBO Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH IC=6A ;IB=0.6 A IC=12A; IB=1.2A IC=6A ;IB=0.6 A IC=12A; IB=1.2A 90 V Collector-emitter saturation voltage 0.6 V Collector-emitter saturation voltage 1.5 V Base-emitter saturation voltage 1.2 V Base-emitter saturation voltage 2.0 V Collector cut-off current VCE =180V;VBE =-1.5V;Tj=125 VEB=5V; IC=0 1.0 mA Emitter cut-off current 1.0 mA Switching times resistive load ton ts tf Turn-on time IC=12A;IB1=1.2A; IB2=2.4A VCC =50V 0.4 0.6 ms Storage time 0.45 1.0 s Fall time 0.12 0.25 s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUV26 Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3 |
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